N28F020-150 参数 Datasheet PDF下载

型号：	N28F020-150
PDF下载：	下载PDF文件查看货源
内容描述：	28F020 2048K （ 256K ×8 ）的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用：
文件页数/大小：	38 页 / 877 K
品牌：	INTEL [ INTEL ]

28F020

4.4

DC Characteristics—TTL/NMOS Compatible—Commercial Products

Limits

Typ⁽³⁾

Symbol

Parameter

Notes

Min

Max

Unit

Test Conditions

I_LI

Input Leakage

Current

±1.0

µA

V_CC= V_CCMax

_IN= V_CCor V_SS

I_LO

Output Leakage

Current

±10

1.0

µA

V_CC= V_CCMax

_OUT= V_CCor V_SS

I_CCS

I_CC1

V_CCStandby

Current

0.3

V_CC= V_CCMax

CE# = V_IH

V_CCActive

Read Current

V_CC= V_CCMax

CE# = V_IL

f = 6 MHz

_OUT= 0 mA

I_CC2

V_CC

Programming

Current

1, 2

1.0

Programming in

Progress

I_CC3

I_CC4

V_CCErase

Current

1, 2

5.0

Erasure in

Progress

V_CCProgram

Verify Current

V_PP= V_PPH

Program Verify

in Progress

I_CC5

V_CCErase

Verify Current

1, 2

5.0

V_PP= V_PPH

Erase Verify

in Progress

I_PPS

I_PP1

V_PPLeakage

Current

±10

200

µA

_PP≤ V_CC

V_PPRead

Current, ID

Current

_PP> V_CC

or Standby

Current

±10

_PP≤ V_CC

I_PP2

V_PP

1, 2

_PP= V_PPH

Programming

Current

Programming in

Progress

I_PP3

I_PP4

V_PPErase

Current

1, 2

V_PP= V_PPH

V_PPProgram

Verify Current

2.0

5.0

V_PP= V_PPH

Program Verify in

Progress

I_PP5

V_PPErase-

Verify Current

1, 2

2.0

5.0

V_PP= V_PPH

Erase Verify in

Progress

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N28F020-150 参数 Datasheet PDF下载

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