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N28F020-150 参数 Datasheet PDF下载

N28F020-150图片预览
型号: N28F020-150
PDF下载: 下载PDF文件 查看货源
内容描述: 28F020 2048K ( 256K ×8 )的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 38 页 / 877 K
品牌: INTEL [ INTEL ]
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28F020  
E
Bus  
Operation  
Start  
Command  
Comments  
Programming (4)  
Wait for VPP Ramp to  
(1)  
Standby  
Apply VPPH  
(1)  
VPPH  
PLSCNT = 0  
Initialize Pulse-Count  
Set-Up  
Program  
Write Set-Up  
Program Cmd  
Write  
Write  
Data = 40H  
Program  
Valid Address/Data  
Duration of Program  
Write Program  
Cmd (A/D)  
Standby  
Write  
Operation (tWHWH1  
)
Time Out 10 µs  
Program  
Verify(2)  
Data = C0H; Stops  
(3)  
Write Program  
Verify Cmd  
Program Operations  
Stand-by  
Read  
tWHGL  
Time Out 6 µs  
Read Byte to Verify  
Programming  
Read Data  
from Device  
N
Compare Data Output to  
Data Expected  
Inc  
PLSCNT  
=25?  
Standby  
N
Verify  
Data  
Y
Y
Data = 00H, Resets the  
Register for Read  
Operations  
Write  
Read  
N
Increment  
Address  
Last  
Address?  
Y
(1)  
Write Read Cmd  
Standby  
Wait for VPP Ramp to VPPL  
(1)  
Apply VPPL  
(1)  
Apply VPPL  
Program  
Error  
Programming  
Completed  
0245_04  
NOTES:  
1. See DC Characteristics for the value of VPPH and VPPL  
.
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the  
register is written with the Read command.  
3. Refer of Principles of Operation.  
4. Caution: The algorithm must be followed to ensure proper and reliable operation of the device.  
Figure 4. 28F020 Quick-Pulse Programming Algorithm  
14  
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