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N28F020-150 参数 Datasheet PDF下载

N28F020-150图片预览
型号: N28F020-150
PDF下载: 下载PDF文件 查看货源
内容描述: 28F020 2048K ( 256K ×8 )的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 38 页 / 877 K
品牌: INTEL [ INTEL ]
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E
28F020  
Table 3. Command Definitions  
Bus  
Cycles  
Req’d  
Command  
First Bus Cycle  
Second Bus Cycle  
Operation(1)  
Write  
Address(2)  
Data(3)  
00H  
Operation(1)  
Address(2)  
Data(3)  
Read Memory  
1
3
X
Read Intelligent  
Identifier Codes(4)  
Write  
IA  
90H  
Read  
Write  
IA  
X
ID  
Set-Up  
2
Write  
X
20H  
20H  
Erase/Erase(5)  
Erase Verify(5)  
2
2
Write  
Write  
EA  
X
A0H  
40H  
Read  
Write  
X
EVD  
PD  
Set-Up Program/  
Program(6)  
PA  
Program Verify(6)  
2
2
Write  
Write  
X
X
C0H  
FFH  
Read  
Write  
X
X
PVD  
FFH  
Reset(7)  
NOTES:  
1. Bus operations are defined in Table 2.  
2. IA = Identifier address: 00H for manufacturer code, 01H for device code.  
EA = Erase Address: Address of memory location to be read during erase verify.  
PA = Program Address: Address of memory location to be programmed.  
Addresses are latched on the falling edge of the Write-Enable pulse.  
3. ID = Identifier Address: Data read from location IA during device identification (Mfr = 89H, Device = BDH).  
EVD = Erase Verify Data: Data read from location EA during erase verify.  
PD = Program Data: Data to be programmed at location PA. Data is latched on the rising edge of Write-Enable.  
PVD = Program Verify Data: Data read from location PA during program verify. PA is latched on the Program command.  
4. Following the Read Intelligent ID command, two read operations access manufacturer and device codes.  
5. Figure 5 illustrates the 28F020 Quick-Erase Algorithm flowchart.  
6. Figure 4 illustrates the 28F020 Quick-Pulse Programming Algorithm flowchart.  
7. The second bus cycle must be followed by the desired command register write.  
2.2.2.1  
Read Command  
command register contents are changed. Refer to  
the AC CharacteristicsRead-Only Operations  
and waveforms for specific timing parameters.  
While VPP is high, for erasure and programming,  
memory contents can be accessed via the Read  
command. The read operation is initiated by writing  
00H into the command register. Microprocessor  
read cycles retrieve array data. The device remains  
enabled for reads until the command register  
contents are altered.  
2.2.2.2  
Intelligent Identifier Command  
Flash memories are intended for use in  
applications where the local CPU alters memory  
contents. As such, manufacturer and device codes  
must be accessible while the device resides in the  
target system. PROM programmers typically  
access signature codes by raising A9 to a high  
voltage. However, multiplexing high voltage onto  
address lines is not a desired system design  
practice.  
The default contents of the register upon VPP  
power-up is 00H. This default value ensures that  
no spurious alteration of memory contents occurs  
during the VPP power transition. Where the VPP  
supply is hardwired to the 28F020, the device  
powers-up and remains enabled for reads until the  
11  
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