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N28F020-150 参数 Datasheet PDF下载

N28F020-150图片预览
型号: N28F020-150
PDF下载: 下载PDF文件 查看货源
内容描述: 28F020 2048K ( 256K ×8 )的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 38 页 / 877 K
品牌: INTEL [ INTEL ]
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28F020  
2.2.1.2  
E
Output Disable  
2.2.1.5  
Write  
With OE# at a logic-high level (VIH), output from  
the device is disabled. Output pins are placed in a  
high-impedance state.  
Device  
erasure  
and  
programming  
are  
accomplished via the command register, when high  
voltage is applied to the VPP pin. The contents of  
the register serve as input to the internal state  
machine. The state machine outputs dictate the  
function of the device.  
2.2.1.3  
Standby  
logic-high level, the standby  
With CE# at  
operation disables most of the 28F020’s circuitry  
and substantially reduces device power  
consumption. The outputs are placed in a high-  
impedance state, independent of the OE# signal. If  
the 28F020 is deselected during erasure,  
programming, or program/erase verification, the  
device draws active current until the operation is  
terminated.  
a
The command register itself does not occupy an  
addressable memory location. The register is a  
latch used to store the command, along with  
address and data information needed to execute  
the command.  
The command register is written by bringing WE#  
to  
a logic-low level (VIL), while CE# is low.  
Addresses are latched on the falling edge of WE#  
while data is latched on the rising edge of the WE#  
pulse. Standard microprocessor write timings are  
used.  
2.2.1.4  
Intelligent Identifier Operation  
The intelligent identifier operation outputs the  
manufacturer code (89H) and device code (BDH).  
Programming equipment automatically matches  
the device with its proper erase and programming  
algorithms.  
Refer to AC Characteristics—Write/Erase/Program  
Only Operations and the erase/programming  
waveforms for specific timing parameters.  
2.2.2  
COMMAND DEFINITIONS  
With CE# and OE# at a logic low level, raising A9  
to high voltage VID (see DC Characteristics)  
activates the operation. Data read from locations  
0000H and 0001H represent the manufacturer’s  
code and the device code, respectively.  
When low voltage is applied to the VPP pin, the  
contents of the command register default to 00H,  
enabling read only operations.  
Placing high voltage on the VPP pin enables  
read/write operations. Device operations are  
selected by writing specific data patterns into the  
command register. Table 3 defines these 28F020  
register commands.  
The manufacturer and device codes can also be  
read via the command register, for instances where  
the 28F020 is erased and reprogrammed in the  
target system. Following a write of 90H to the  
command register, a read from address location  
0000H outputs the manufacturer code (89H). A  
read from address 0001H outputs the device code  
(BDH).  
10  
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