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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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E
2-MBIT SmartVoltage BOOT BLOCK FAMILY  
NOTES:  
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC  
Characteristics during read mode.  
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally  
which includes verify and margining operations.  
3. Refer to command definition table for valid A . (Table 7)  
IN  
4. Refer to command definition table for valid D . (Table 7)  
IN  
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1).  
6. For boot block program/erase, RP# should be held at VHH or WP# should be held at VIH until operation completes  
successfully.  
7. Time tPHBR is required for successful locking of the boot block.  
8. Sampled, but not 100% tested.  
9. See Test Configuration (Figure 14), 3.3 V Standard Test component values.  
10. See Test Configuration (Figure 14), 5 V High-Speed Test component values.  
11. See Test Configuration (Figure 14), 5 V Standard Test component values.  
1
2
3
4
5
6
V
IH  
ADDRESSES (A)  
A
A
IN  
IN  
V
IL  
tAVAV  
tAVWH  
tWHAX  
V
IH  
CE# (E)  
VIL  
tELWL  
tWHEH  
V
IH  
OE# (G)  
VIL  
tWHWL  
tWHQV1,2,3,4  
V
IH  
WE# (W)  
V
IL  
tWLWH  
tDVWH  
tWHDX  
V
IH  
High Z  
Valid  
SRD  
DATA (D/Q)  
D
D
IN  
D
IN  
IN  
V
IL  
tPHHWH  
tPHWL  
tQVPH  
6.5V VHH  
V
IH  
RP# (P)  
VIL  
V
IH  
WP#  
VIL  
tQVVL  
tVPWH  
VPPH  
2
VPPH  
VPPLK  
VIL  
1
V
(V)  
PP  
NOTES:  
1. V Power-Up and Standby.  
CC  
2. Write program or Erase Set-Up Command.  
3. Write Valid Address and Data (Program) or Erase Confirm Command.  
4. Automated Program or Erase Delay.  
5. Read Status Register Data.  
6. Write Read Array Command.  
0530_17  
Figure 17. AC Waveforms for Write Operations (WE#–Controlled Writes)  
39  
SEE NEW DESIGN RECOMMENDATIONS  
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