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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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2-MBIT SmartVoltage BOOT BLOCK FAMILY  
E
NOTES:  
See AC Characteristics—WE#-Controlled Write Operations for notes 1 through 11.  
12. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where  
CE# defines the write pulse-width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should  
be measured relative to the CE# waveform.  
1
2
3
4
5
6
VIH  
ADDRESSES (A)  
VIL  
AIN  
AIN  
tAVAV  
tAVEH  
tEHAX  
VIH  
WE# (W)  
VIL  
tWLEL  
tEHWH  
VIH  
OE# (G)  
VIL  
VIH  
t EHEL  
t EHQV1,2,3,4  
CE# (E)  
VIL  
t ELEH  
t DVEH  
t EHDX  
VIH  
DATA (D/Q)  
VIL  
High Z  
t PHEL  
Valid  
SRD  
D
D
D
IN  
IN  
IN  
tPHHEH  
tQVPH  
VHH  
6.5V  
VIH  
RP# (P)  
VIL  
VIH  
WP#  
VIL  
t VPEH  
tQVVL  
VPPH2  
VPPH  
VPPLK  
VIL  
1
VPP(V)  
NOTES:  
1. V Power-Up and Standby.  
CC  
2. Write program or Erase Set-Up Command.  
3. Write Valid Address and Data (Program) or Erase Confirm Command.  
4. Automated Program or Erase Delay.  
5. Read Status Register Data.  
6. Write Read Array Command.  
0530_18  
Figure 18. Alternate AC Waveforms for Write Operations (CE#–Controlled Writes)  
42  
SEE NEW DESIGN RECOMMENDATIONS  
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