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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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E
2-MBIT SmartVoltage BOOT BLOCK FAMILY  
4.8  
Erase and Program Timings—Commercial  
TA = 0 °C to +70 °C  
5 V ± 10%  
3.3 ± 0.3 V  
12 V ± 5%  
3.3 ± 0.3 V 5 V ± 10%  
Typ Max Unit  
0.34  
VPP  
5 V ± 10%  
VCC  
Parameter  
Typ  
0.84  
2.4  
1.7  
1.1  
10  
Max  
7
Typ  
0.8  
1.9  
1.8  
0.9  
10  
Max  
7
Typ  
0.44  
1.3  
1.6  
0.8  
8
Max  
7
Boot/Parameter Block Erase Time  
Main Block Erase Time  
7
s
s
14  
14  
14  
1.1  
1.2  
0.6  
8
14  
Main Block Program Time (Byte)  
Main Block Program Time (Word)  
Byte Program Time  
s
s
µs  
µs  
Word Program Time  
13  
13  
8
8
NOTES:  
1. All numbers are sampled, not 100% tested.  
2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value  
independent of VCC and VPP. See Note 3 for typical conditions.  
3. Typical conditions are +25 °C with VCC and VPP at the center of the specified voltage range.Production programming using  
CC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.  
4. Contact your Intel representative for information regarding maximum byte/word program specifications.  
V
4.9  
Extended Operating Conditions  
Table 11. Extended Temperature and VCC Operating Conditions  
Symbol  
TA  
Parameter  
Notes  
Min  
–40  
3.0  
Max  
+85  
3.6  
Units  
°C  
Operating Temperature  
VCC  
3.3 V VCC Supply Voltage (± 0.3 V)  
5 V VCC Supply Voltage (10%)  
1
2
Volts  
Volts  
4.50  
5.50  
NOTES:  
1. AC specifications are valid at both voltage ranges.See DC Characteristics tables for voltage range-specific specifications.  
2. 10% VCC specifications apply to 80 ns and 120 ns versions in their standard test configuration.  
43  
SEE NEW DESIGN RECOMMENDATIONS  
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