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E28F200B5B80 参数 Datasheet PDF下载

E28F200B5B80图片预览
型号: E28F200B5B80
PDF下载: 下载PDF文件 查看货源
内容描述: 智能5引导块闪存系列2 , 4 , 8兆比特 [SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 500 K
品牌: INTEL [ INTEL ]
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SMART 5 BOOT BLOCK MEMORY FAMILY  
E
V
IH  
RP# (P)  
VCC  
tPHQV  
tPHWL  
tPHEL  
VIL  
tPLPH  
(A) Reset during Read Mode  
R1  
Abort  
Complete  
tPHQV  
tPHWL  
tPHEL  
DEVICE  
UNDER  
OUT  
t PLRH  
TEST  
VIH  
VIL  
CL  
RP# (P)  
R2  
t PLPH  
t PLPH  
t PLRH  
<
(B) Reset during Program or Block Erase,  
Abort Deep  
Complete Power-  
0599-12  
tPHQV  
tPHWL  
tPHEL  
NOTE:  
Down  
t PLRH  
CL includes jig capacitance.  
VIH  
VIL  
RP# (P)  
Figure 13. Test Configuration  
t PLPH  
Test Configuration Component Values  
(C) Reset Program or Block Erase,  
>
t PLPH tPLRH  
0599-13  
Test Configuration  
5 V Standard Test  
CL (pF) R1 () R2 ()  
Figure 14. AC Waveform for Reset Operation  
Table 9. Reset Specifications(1)  
100  
30  
580  
580  
390  
390  
5 V High-Speed Test  
Sym  
Parameter  
Min Max Unit  
tPLPH RP# Pulse Low  
Time  
60  
ns  
tPLRH RP# Low to Reset  
during Prog/Erase  
12  
µs  
1. If RP# is tied to V , these specs are not applicable.  
CC  
2. These specifications are valid for all product versions  
(packages and speeds).  
3. If RP# is asserted while a program or block erase, is  
not executing, the reset will complete within tPLPH  
.
4. A reset time, tPHQV, is required after tPLRH until outputs  
are valid. See Section 3.1.5 for detailed information.  
30  
ADVANCE INFORMATION  
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