E
SMART 5 BOOT BLOCK MEMORY FAMILY
5.3
Capacitance
TA = 25 °C, f = 1 MHz
Symbol
CIN
COUT
Parameter
Note
4
Typ
6
Max
8
Unit
pF
Conditions
VIN = 0 V
VOUT = 0 V
Input Capacitance
Output Capacitance
4, 7
10
12
pF
1. Sampled, not 100% tested.
5.4
DC Characteristics—Commercial and Extended Temperature
Temp
Comm
Extended
Sym
Parameter
Note Typ Max Typ Max Unit
Test Condition
IIL
Input Load Current
Output Leakage Current
VCC Standby Current
1
1
±1.0
± 10
2.0
±1.0 µA VCC = VCC Max, VIN = VCC or GND
± 10 µA VCC = VCC Max, VIN = VCC or GND
ILO
ICCS
VCC = VCC Max, CE# = RP# =
2.5 mA
1,3
BYTE# = WP# = VIH
VCC = VCC Max
150 µA
130
8
CE# = RP# = VCC ± 0.2 V
ICCD
VCC Deep Power-Down
Current
1
8
µA VCC = VCC Max, VIN = VCC or GND
RP# = GND ± 0.2 V
VCC Read Current
CMOS INPUTS
ICCR
1,5,
6
60
65
65 mA
70 mA
50 mA
(Word or Byte Mode)
V
CC = VCC Max, CE# = GND,
OE# = VCC, f = 10 MHz (5 V),
IOUT = 0 mA, Inputs=GND or VCC
TTL INPUTS
VCC = VCC Max, CE# = VIL,
OE# = VIH , f = 10 MHz (5 V),
IOUT = 0 mA, Inputs = VIL or VIH
ICCW VCC Program Current
(Word or Byte Mode)
1,4
1,4
50
45
VPP = VPPH1 (at 5 V)
45 mA VPP = VPPH2 (at 12 V)
45 mA PP = VPPH1 (at 5 V)
ICCE
VCC Erase Current
35
V
30
40 mA VPP = VPPH2 (at 12 V)
ICCES VCC Erase Susp Current 1,2
10
12.0 mA CE# = VIH , Block Erase Suspend
IPPS
IPPD
VPP Standby Current
1
1
± 10
5.0
± 15 µA VPP < VPPH
2
VPP Deep Power-Down
Current
10 µA RP# = GND ± 0.2 V
IPPR
VPP Read Current
1
200
200 µA
VPP ≥ VPPH2
27
ADVANCE INFORMATION
INTEL [ INTEL ]
