E
SMART 5 BOOT BLOCK MEMORY FAMILY
5.7
AC Characteristics—Write Operations—Commercial and Extended
Temperature
Comm
Extended
#
Sym
Parameter
Note Min Max Min Max Unit
W1 tPHWL (tPHEL
)
RP# High Recovery to WE# (CE#) Going
Low
450
450
ns
W2 tELWL (tWLEL
)
CE# (WE#) Setup to WE# (CE#) Going
Low
0
0
ns
W3 tWP
W4 tDVWH (tDVEH
W5 tAVWH (tAVEH
W6 tWHEH (tEHWH
W7 tWHDX (tEHDX
W8 tWHAX (tEHAX
W9 tWPH
Write Pulse Width
9
4
3
50
50
50
0
60
60
60
0
ns
ns
ns
ns
ns
ns
ns
ns
)
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
Write Pulse Width High VCC = 5 V ± 5%
)
)
)
4
3
0
0
)
0
0
10
20
10
20
VCC = 5 V ±
10%
W10 tPHHWH (tPHHEH
)
RP# VHH Setup to WE# (CE#) Going High
VPP Setup to WE# (CE#) Going High
RP# VHH Hold from Valid SRD
VPP Hold from Valid SRD
6,8 100
5,8 100
100
100
0
ns
W11 tVPWH (tVPEH
)
ns
ns
W12 tQVPH
W13 tQVVL
6,8
5,8
7,8
0
0
0
ns
W14 tPHBR
Boot Block Lock Delay
100
100 ns
NOTES:
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer toAC
Characteristics—Read-Only Operations.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally
which includes verify operations.
3. Refer to command definition table for valid A . (Table 6)
IN
4. Refer to command definition table for valid D . (Table 6)
IN
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1).
6. For boot block program/erase, RP# should be held at VHH or WP# should be held at VIH until operation completes
successfully.
7. Time tPHBR is required for successful locking of the boot block.
8. Sampled, but not 100% tested.
9. Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last)to CE# or WE# going high
(whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH
.
10. Write pulse width high (tWPH) is defined from CE# or WE# going high (whichever goes high first)to CE# or WE# going low
(whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL
.
33
ADVANCE INFORMATION
INTEL [ INTEL ]
