SMART 5 BOOT BLOCK MEMORY FAMILY
E
Device and
Data
Valid
Address Selection
Standby
V
IH
ADDRESSES (A)
VIL
Address Stable
R1
V
IH
CE# (E)
VIL
R8
R9
V
IH
OE# (G)
VIL
V
WE# (W) IH
R4
R3
Valid Output
R7
R10
VIL
VOH
DATA (D/Q)
VOL
R6
R5
High Z
High Z
R2
V
IH
RP#(P)
VIL
0599-14
Figure 15. AC Waveforms for Read Operations
5.6
Erase and Program Timings—Commercial and Extended Temperature
VCC = 5 V ± 10%
Temp
VPP
Commercial
5 V ± 10% 12 V ± 5%
Extended
5 V ± 10% 12 V ± 5%
Typ Max Units
Parameter
Typ
Max
7
Typ
Max
7
Typ
Max
7
s
s
Boot/Parameter Block Erase Time
Main Block Erase Time
7
14
14
14
14
s
Main Block Write Time (Byte Mode)
Main Block Write Time (Word Mode)
Byte Program Time
s
µs
µs
100
100
100
100
100
100
100
100
Word Program Time
NOTES:
1. All numbers are sampled, not 100% tested.
2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of VCC and VPP. See Note 3 for typical conditions.
3. Typical conditions are 25 °C with VCC and VPP at the center of the specified voltage range.Production programming using
CC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.
V
4. Contact your Intel representative for information regarding maximum byte/word write specifications.
5. Max program times are guaranteed for the two parameter blocks and 96-KB main block only.
32
ADVANCE INFORMATION
INTEL [ INTEL ]
