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E28F200B5B80 参数 Datasheet PDF下载

E28F200B5B80图片预览
型号: E28F200B5B80
PDF下载: 下载PDF文件 查看货源
内容描述: 智能5引导块闪存系列2 , 4 , 8兆比特 [SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 500 K
品牌: INTEL [ INTEL ]
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E
SMART 5 BOOT BLOCK MEMORY FAMILY  
5.5  
AC Characteristics—Read Operations—Commercial and Extended  
Temperature  
Temp  
Speed  
VCC  
Commercial  
-60/-70  
Extended  
-80/-90  
-80/-90  
#
Sym  
Parameter  
5V ± 5%(4) 5V±10% (5) 5V± 10%(5) 5V± 10%(5) Unit  
30 pF 100 pF 100 pF 100 pF  
Load  
Notes Min Max Min Max Min Max Min Max  
R1 tAVAV Read Cycle  
Time  
2, 4 Mbit  
8 Mbit  
60  
70  
70  
80  
80  
90  
80  
90  
ns  
ns  
R2 tAVQV Address to  
Output Delay  
2, 4 Mbit  
8 Mbit  
60  
70  
70  
80  
80  
90  
80 ns  
90 ns  
80 ns  
90 ns  
40 ns  
450 ns  
ns  
R3 tELQV CE# to  
Output Delay  
2, 4 Mbit  
8 Mbit  
2
2
60  
70  
80  
70  
80  
90  
R4 tGLQV OE# to Output Delay  
R5 tPHQV RP# to Output Delay  
R6 tELQX CE# to Output in Low Z  
R7 tGLQX OE# to Output in Low Z  
R8 tEHQZ CE# to Output in High Z  
R9 tGHQZ OE# to Output in High Z  
30  
35  
40  
450  
450  
450  
3
3
3
3
3
0
0
0
0
0
0
0
0
ns  
20  
20  
20  
20  
20  
20  
25 ns  
25 ns  
ns  
R10 tOH  
Output Hold from Address,  
CE#, or OE# Change,  
Whichever Occurs First  
0
0
0
0
NOTES:  
1. See AC Input/Output Reference Waveform for timing measurements.  
2. OE# may be delayed up to tCE–tOE after the falling edge of CE# without impact on tCE  
.
3. Sampled, but not 100% tested.  
4. See Test Configuration (Figure 13), 5 V High-Speed Test component values.  
5. See Test Configuration (Figure 13), 5 V Standard Test component values.  
6. Dynamic BYTE# switching between word and byte modes is not supported. Mode changes must be made when the device  
is in deep power-down or powered down.  
31  
ADVANCE INFORMATION  
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