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E28F200B5B80 参数 Datasheet PDF下载

E28F200B5B80图片预览
型号: E28F200B5B80
PDF下载: 下载PDF文件 查看货源
内容描述: 智能5引导块闪存系列2 , 4 , 8兆比特 [SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 500 K
品牌: INTEL [ INTEL ]
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E
SMART 5 BOOT BLOCK MEMORY FAMILY  
these bits, several operations (such as cumulatively  
erasing multiple blocks or programming several  
bytes in sequence) may be performed before  
polling the status register to determine if an error  
occurred during the series.  
“0,” erase all bits to “1,” and verify that all bits in the  
block are sufficiently erased. After block erase  
command sequence is issued, the device  
automatically enters read status register mode and  
outputs status register data when read (see  
Figure 9). The completion of the erase event is  
indicated on status register bit SR.7.  
Issue the Clear Status Register command (50H) to  
clear the status register. It functions independently  
of the applied VPP voltage and RP# can be VIH or  
When an erase is complete, check status register  
bit SR.5 for an error flag (“1”). The cause of a failure  
may be found on SR.3, which indicates “1” if VPP  
was out of program/erase voltage range (VPPH1 or  
V
HH. This command is not functional during block  
erase suspend modes. Resetting the part with RP#  
also clears the status register.  
V
PPH2). If an Erase Set-Up (20H) command is  
issued but not followed by an Erase Confirm (D0H)  
command, then both the program status (SR.4) and  
the erase status (SR.5) will be set to “1.”  
3.2.4  
WORD/BYTE PROGRAM  
Word or byte program operations are executed by a  
two-cycle command sequence. Program Set-Up  
(40H) is issued, followed by a second write that  
specifies the address and data (latched on the  
rising edge of WE# or CE#, whichever comes first).  
The WSM then takes over, controlling the program  
and program verify algorithms internally. While the  
WSM is working, the device automatically enters  
read status register mode and remains there after  
the word/byte program is complete. (see Figure 8).  
The completion of the program event is indicated on  
status register bit SR.7.  
The status register should be cleared before the  
next operation. Since the device remains in status  
register read mode after erasing is completed, a  
command must be issued to switch to another  
mode before beginning a different operation.  
3.2.5.1  
Erase Suspend/Resume  
The Erase Suspend command (B0H) interrupts an  
erase operation in order to read data in another  
block of memory. While the erase is in progress,  
issuing the Erase Suspend command requests that  
the WSM suspend the erase algorithm after a  
certain latency period. After issuing the Erase  
Suspend command, write the Read Status Register  
command, then check bit SR.7 and SR.6 to ensure  
the device is in the erase suspend mode (both will  
be set to “1”). This check is necessary because the  
WSM may have completed the erase operation  
before the Erase Suspend command was issued. If  
this occurs, the Erase Suspend command would  
switch the device into read array mode. See  
Appendix A for a comprehensive chart showing the  
state transitions.  
When a word/byte program is complete, check  
status register bit SR.4 for an error flag (“1”). The  
cause of a failure may be found on SR.3, which  
indicates “1” if VPP was out of program/erase  
voltage range (VPPH1 or VPPH2). The status register  
should be cleared before the next operation. The  
internal WSM verify only detects errors for “1”s that  
do not successfully write to “0”s.  
Since the device remains in status register read  
mode after programming is completed, a command  
must be issued to switch to another mode before  
beginning a different operation.  
When erase has been suspended, a Read Array  
command (FFH) can be written to read from blocks  
other than that which is suspended. The only other  
valid commands at this time are Erase Resume  
(D0H) or Read Status Register.  
3.2.5  
BLOCK ERASE  
A
block erase changes all block data to 1’s  
(FFFFH) and is initiated by a two-cycle command.  
An Erase Set-Up command (20H) is issued first,  
followed by an Erase Confirm command (D0H)  
along with an address within the target block. The  
address will be latched at the rising edge of WE# or  
CE#, whichever comes first.  
During erase suspend mode, the chip can go into a  
pseudo-standby mode by taking CE# to VIH, which  
reduces active current draw. VPP must remain at  
VPPH1 or VPPH2 (the same VPP level used for block  
erase) while erase is suspended. RP# must also  
remain at VIH or VHH (the same RP# level used for  
block erase).  
Internally, the WSM will program all bits in the block  
to “0,” verify all bits are adequately programmed to  
17  
ADVANCE INFORMATION  
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