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E28F200B5B80 参数 Datasheet PDF下载

E28F200B5B80图片预览
型号: E28F200B5B80
PDF下载: 下载PDF文件 查看货源
内容描述: 智能5引导块闪存系列2 , 4 , 8兆比特 [SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 500 K
品牌: INTEL [ INTEL ]
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E
SMART 5 BOOT BLOCK MEMORY FAMILY  
operation has completed, the device remains in  
read status register mode. From this mode any of  
the other read or write modes can be reached with  
the appropriate command. For example, to read  
data, issue the Read Array command. Additional  
Program or Erase commands can also be issued  
from this state.  
3.0 PRINCIPLES OF OPERATION  
The system processor accesses the Smart 5 boot  
block memories through the Command User  
Interface (CUI), which accepts commands written  
with standard microprocessor write timings and  
TTL-level control inputs. The flash can be switched  
into each of its three read and two write modes  
During program or erase operations, the array data  
is not available for reading or code execution,  
except during an erase suspend. Consequently, the  
software that initiates and polls progress of program  
and erase operations must be copied to and  
executed from system RAM during flash memory  
update. After successful completion, reads are  
again possible via the Read Array command.  
through commands issued to the CUI.  
comprehensive chart showing the state transitions  
is in Appendix A.  
A
After initial device power-up or return from deep  
power-down mode, the device defaults to read  
array mode. In this mode, manipulation of the  
memory control pins allows array read, standby,  
and output disable operations. The other read  
modes, read identifier and read status register, can  
be reached by issuing the appropriate command to  
the CUI. Array data, identifier codes and status  
register results can be accessed using these  
commands independently from the VPP voltage.  
Read identifier mode can also be accessed by  
PROM programming equipment by raising A9 to  
high voltage (VID).  
Each of the device modes will be discussed in  
detail in the following sections.  
3.1  
Bus Operations  
The local CPU reads and writes flash memory in-  
system. All bus cycles to or from the flash memory  
conform to standard microprocessor bus cycles.  
Four control pins dictate the data flow in and out of  
the component: CE#, OE#, WE#, and RP#. These  
bus operations are summarized in Tables 3 and 4.  
CUI commands sequences also control the write  
functions of the flash memory, Program and Erase.  
Issuing program or erase command sequences  
internally latches addresses and data and initiates  
Write State Machine (WSM) operations to execute  
the requested write function. The WSM internally  
regulates the program and erase algorithms,  
including pulse repetition, internal verification, and  
margining of data, freeing the host processor from  
these tasks and allowing precise control for high  
reliability. To execute Program or Erase  
commands, VPP must be at valid write voltage (5 V  
or 12 V).  
3.1.1  
READ  
The flash memory has three read modes available,  
read array, read identifier, and read status. These  
read modes are accessible independent of the VPP  
voltage. RP# can be at either VIH or VHH. The  
appropriate read-mode command must be issued to  
the CUI to enter the corresponding mode. Upon  
initial device power-up or after exit from deep  
power-down mode, the device automatically  
defaults to read array mode.  
While the WSM is executing a program operation,  
the device defaults to the read status register mode  
and all commands are ignored. Thus during the  
programming process, only status register data can  
be accessed from the device. While the WSM is  
CE# and OE# must be driven active to obtain data  
at the outputs. CE# is the device selection control,  
and, when active, enables the selected memory  
device. OE# is the data output (DQ0–DQ15) control  
and when active drives the selected memory data  
onto the I/O bus. In read modes, WE# must be at  
VIH and RP# must be at VIH or VHH. Figure 15  
illustrates a read cycle.  
executing  
a erase operation, the device also  
defaults to the read status register mode but one  
additional command is available, erase suspend to  
read, which will suspend the erase operation and  
allow reading of array data. The suspended erase  
operation can be completed by issuing the Erase  
Resume command. After the program or erase  
13  
ADVANCE INFORMATION  
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