E
SMART 5 BOOT BLOCK MEMORY FAMILY
Table 3. Bus Operations for Word-Wide Mode (BYTE# = VIH)
Mode
Read
Notes
RP#
VIH
VIH
VIH
VIL
CE#
VIL
VIL
VIH
X
OE#
VIL
VIH
X
WE#
VIH
VIH
X
A9
X
A0
X
VPP
X
DQ0–15
DOUT
1,2,3
Output Disable
X
X
X
High Z
High Z
High Z
0089 H
Standby
X
X
X
Deep Power-Down
9
4
X
X
X
X
X
Intelligent Identifier
(Mfr.)
VIH
VIL
VIL
VIH
VID
VIL
X
Intelligent Identifier
(Device)
4,5
VIH
VIH
VIL
VIL
VIL
VIH
VIH
VIL
VID
X
VIH
X
X
X
See
Table 4
Write
6,7,8
DIN
Table 4. Bus Operations for Byte-Wide Mode (BYTE# = VIL)
(10)
Mode
Read
Note RP#
CE#
VIL
OE# WE#
A9
X
A0
X
A–1
X
VPP
X
DQ0–7
DOUT
DQ8–14
High Z
High Z
1,2,3
VIH
VIH
VIL
VIH
VIH
VIH
Output
VIL
X
X
X
X
High Z
Disable
Standby
VIH
VIL
VIH
X
X
X
X
X
X
X
X
X
X
X
X
X
High Z
High Z
High Z
High Z
Deep
Power-
Down
9
4
Intelligent
Identifier
(Mfr.)
VIH
VIH
VIH
VIL
VIL
VIL
VIL
VIL
VIH
VIH
VIH
VIL
VID
VID
X
VIL
VIH
X
X
X
X
X
X
X
89H
High Z
High Z
High Z
Intelligent
Identifier
(Device)
4,5
See
Table 4
Write
6,7,8
DIN
NOTES:
1. Refer to DC Characteristics.
2. X can be VIL, VIH for control pins and addresses, VPPLK or VPPH for VPP
.
3. See DC Characteristics for VPPLK, VPPH1, VPPH2, VHH, VID voltages.
4. Manufacturer and device codes may also be accessed via a CUI write sequence, A selects, all other addresses = X.
0
5. See Table 4 for device IDs.
6. Refer to Table 6 for valid DIN during a write operation.
7. Command writes for block erase or program are only executed when VPP = VPPH1 or VPPH2
8. To program or erase the boot block, hold RP# at VHH or WP# at VIH. See Section 3.3.
9. RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.
10. This column does not apply to the E28F004B5 since it is a x8-only device.
.
15
ADVANCE INFORMATION