欢迎访问ic37.com |
会员登录 免费注册
发布采购

E28F200B5B80 参数 Datasheet PDF下载

E28F200B5B80图片预览
型号: E28F200B5B80
PDF下载: 下载PDF文件 查看货源
内容描述: 智能5引导块闪存系列2 , 4 , 8兆比特 [SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 500 K
品牌: INTEL [ INTEL ]
 浏览型号E28F200B5B80的Datasheet PDF文件第11页浏览型号E28F200B5B80的Datasheet PDF文件第12页浏览型号E28F200B5B80的Datasheet PDF文件第13页浏览型号E28F200B5B80的Datasheet PDF文件第14页浏览型号E28F200B5B80的Datasheet PDF文件第16页浏览型号E28F200B5B80的Datasheet PDF文件第17页浏览型号E28F200B5B80的Datasheet PDF文件第18页浏览型号E28F200B5B80的Datasheet PDF文件第19页  
E
SMART 5 BOOT BLOCK MEMORY FAMILY  
Table 3. Bus Operations for Word-Wide Mode (BYTE# = VIH)  
Mode  
Read  
Notes  
RP#  
VIH  
VIH  
VIH  
VIL  
CE#  
VIL  
VIL  
VIH  
X
OE#  
VIL  
VIH  
X
WE#  
VIH  
VIH  
X
A9  
X
A0  
X
VPP  
X
DQ0–15  
DOUT  
1,2,3  
Output Disable  
X
X
X
High Z  
High Z  
High Z  
0089 H  
Standby  
X
X
X
Deep Power-Down  
9
4
X
X
X
X
X
Intelligent Identifier  
(Mfr.)  
VIH  
VIL  
VIL  
VIH  
VID  
VIL  
X
Intelligent Identifier  
(Device)  
4,5  
VIH  
VIH  
VIL  
VIL  
VIL  
VIH  
VIH  
VIL  
VID  
X
VIH  
X
X
X
See  
Table 4  
Write  
6,7,8  
DIN  
Table 4. Bus Operations for Byte-Wide Mode (BYTE# = VIL)  
(10)  
Mode  
Read  
Note RP#  
CE#  
VIL  
OE# WE#  
A9  
X
A0  
X
A–1  
X
VPP  
X
DQ0–7  
DOUT  
DQ8–14  
High Z  
High Z  
1,2,3  
VIH  
VIH  
VIL  
VIH  
VIH  
VIH  
Output  
VIL  
X
X
X
X
High Z  
Disable  
Standby  
VIH  
VIL  
VIH  
X
X
X
X
X
X
X
X
X
X
X
X
X
High Z  
High Z  
High Z  
High Z  
Deep  
Power-  
Down  
9
4
Intelligent  
Identifier  
(Mfr.)  
VIH  
VIH  
VIH  
VIL  
VIL  
VIL  
VIL  
VIL  
VIH  
VIH  
VIH  
VIL  
VID  
VID  
X
VIL  
VIH  
X
X
X
X
X
X
X
89H  
High Z  
High Z  
High Z  
Intelligent  
Identifier  
(Device)  
4,5  
See  
Table 4  
Write  
6,7,8  
DIN  
NOTES:  
1. Refer to DC Characteristics.  
2. X can be VIL, VIH for control pins and addresses, VPPLK or VPPH for VPP  
.
3. See DC Characteristics for VPPLK, VPPH1, VPPH2, VHH, VID voltages.  
4. Manufacturer and device codes may also be accessed via a CUI write sequence, A selects, all other addresses = X.  
0
5. See Table 4 for device IDs.  
6. Refer to Table 6 for valid DIN during a write operation.  
7. Command writes for block erase or program are only executed when VPP = VPPH1 or VPPH2  
8. To program or erase the boot block, hold RP# at VHH or WP# at VIH. See Section 3.3.  
9. RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.  
10. This column does not apply to the E28F004B5 since it is a x8-only device.  
.
15  
ADVANCE INFORMATION  
 复制成功!