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E28F200B5B80 参数 Datasheet PDF下载

E28F200B5B80图片预览
型号: E28F200B5B80
PDF下载: 下载PDF文件 查看货源
内容描述: 智能5引导块闪存系列2 , 4 , 8兆比特 [SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 500 K
品牌: INTEL [ INTEL ]
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SMART 5 BOOT BLOCK MEMORY FAMILY  
3.1.2 OUTPUT DISABLE  
E
operation is restored. The CUI resets to read array  
mode, and the status register is set to 80H. This  
case is shown in Figure 14A.  
With OE# at a logic-high level (VIH), the device  
outputs are disabled. Output pins (if available on  
the device) DQ0–DQ15 are placed in  
a high-  
If RP# is taken low for time tPLPH during a program  
or erase operation, the operation will be aborted  
and the memory contents at the aborted location  
(for a program) or block (for an erase) are no longer  
valid, since the data may be partially erased or  
written. The abort process goes through the  
following sequence: When RP# goes low, the  
device shuts down the operation in progress, a  
process which takes time tPLRH to complete. After  
this time tPLRH, the part will either reset to read  
impedance state.  
3.1.3  
STANDBY  
Deselecting the device by bringing CE# to a logic-  
high level (VIH) places the device in standby mode  
which substantially reduces device power  
consumption. In standby, outputs DQ0–DQ15 are  
placed in a high-impedance state independent of  
OE#. If deselected during program or erase  
operation, the device continues functioning and  
consuming active power until the operation  
completes.  
array mode (if RP# has gone high during tPLRH  
,
Figure 14B) or enter deep power-down mode (if  
RP# is still logic low after tPLRH, Figure 14C). In  
both cases, after returning from an aborted  
operation, the relevant time tPHQV or tPHWL/tPHEL  
must be waited before a read or write operation is  
initiated, as discussed in the previous paragraph.  
However, in this case, these delays are referenced  
to the end of tPLRH rather than when RP# goes high.  
3.1.4  
WORD/BYTE CONFIGURATION  
The 16-bit devices can be configured for either an  
8-bit or 16-bit bus width by setting the BYTE# pin  
before power-up. This is not applicable to the 8-bit  
only E28F004B5.  
As with any automated device, it is important to  
assert RP# during system reset. When the system  
comes out of reset, processor expects to read from  
the flash memory. Automated flash memories  
provide status information when read during  
program or block erase operations. If a CPU reset  
occurs with no flash memory reset, proper CPU  
initialization may not occur because the flash  
memory may be providing status information  
instead of array data. Intel’s Flash memories allow  
proper CPU initialization following a system reset  
through the use of the RP# input. In this application,  
RP# is controlled by the same RESET# signal that  
resets the system CPU.  
When BYTE# is set to logic low, the byte-wide  
mode is enabled, where data is read and  
programmed on DQ0–DQ7 and DQ15/A–1 becomes  
the lowest order address that decodes between the  
upper and lower byte. DQ8–DQ14 are tri-stated  
during the byte-wide mode.  
When BYTE# is at logic high, the word-wide mode  
is enabled, and data is read and programmed on  
DQ0–DQ15  
.
3.1.5  
DEEP POWER-DOWN/RESET  
3.1.6  
WRITE  
RP# at VIL initiates the deep power-down mode,  
also referred to as reset mode.  
The CUI does not occupy an addressable memory  
location. Instead, commands are written into the  
CUI using standard microprocessor write timings  
when WE# and CE# are low, OE# = VIH, and the  
proper address and data (command) are presented.  
The address and data for a command are latched  
on the rising edge of WE# or CE#, whichever goes  
high first. Figure 16 illustrates a write operation.  
From read mode, RP# going low for time tPLPH  
deselects the memory, places output drivers in a  
high-impedance state, and turns off all internal  
circuits. After return from power-down, a time tPHQV  
is required until the initial memory access outputs  
are valid. A delay (tPHWL or tPHEL) is required after  
return from power-down before a write can be  
initiated. After this wake-up interval, normal  
14  
ADVANCE INFORMATION  
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