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6400 参数 Datasheet PDF下载

6400图片预览
型号: 6400
PDF下载: 下载PDF文件 查看货源
内容描述: 高级内存缓冲器 [Advanced Memory Buffer]
分类和应用:
文件页数/大小: 250 页 / 3863 K
品牌: INTEL [ INTEL ]
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Registers  
Table 14-13.BL8 Column and Chunk Correspondence to DRAM Address  
Register Bit Location  
DRAM Col Address  
Data Chunk  
12 11 10  
9
8
9
7
8
6
7
5
6
4
5
3
4
2
3
1
0
1
14 13 12 11  
2
X
• where the auto-precharge address bit 10 is assumed zero  
• since data is logged in 144 bits (two chunks), Data chunk address bit zero is not  
needed  
14.5.2.4  
MB_START_ADDR: Memory Test Start Address  
MB_END_ADDR row and column address must be larger than MB_START_ADDR row  
and column address in either increasing or deceasing address mode.  
During FastX, FastY and FastXY operation, only one memory bank is tested. Specify the  
desired bank in MB_START_ADDR[2:0]. MB_END_ADDR[2:0] is ignored.  
This register is only used when MBCSR.atype = 2b’10, and when MBCSR.algo is  
non-zero.  
Device:  
NodeID  
Function: 3  
Offset:  
Bit  
9Ch  
Attr  
Default  
Description  
31:16 RWST  
0000h ROW: MemBIST Start Row Address 15:0  
Reserved  
15  
RV  
0
14:3  
RWST  
0000h COL: MemBIST Start Column Address  
BL8 [14:3] <==> Column Address 15:11, 9:3  
BL4 [14:3] <==> Column Address 14:11, 9:2  
2:0  
RWST  
000  
BA: MemBIST Start Bank Address 2:0  
14.5.2.5  
MB_END_ADDR: Memory Test End Address  
This register is only used when MBCSR.atype = 2b’10, and when MBCSR.algo is  
non-zero.  
Device:  
NodeID  
Function: 3  
Offset:  
Bit  
A0h  
Attr  
Default  
Description  
31:16 RWST  
0000h ROW: MemBIST End Row Address 15:0  
Reserved  
15  
RV  
0
14:3  
RWST  
0000h COL: MemBIST End Column Address  
BL8 [14:3] <==> Column Address 15:11, 9:3  
BL4 [14:3] <==> Column Address 14:11, 9:2  
2:0  
RWST  
000  
BA: MemBIST End Bank Address 2:0  
196  
Intel® 6400/6402 Advanced Memory Buffer Datasheet  
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