AV-51002
2015.12.16
1-49
Internal Temperature Sensing Diode Specifications
Table 1-38: Memory Block Performance Specifications for Arria V Devices
Resources Used
Performance
Unit
Memory
Mode
ALUTs
Memory
–I3, –C4
500
–I5, –C5
–C6
400
400
300
Single port, all supported widths
0
0
0
1
1
1
450
MHz
MHz
MHz
Simple dual-port, all supported widths
500
450
MLAB
Simple dual-port with read and write at
the same address
400
350
ROM, all supported width
—
0
—
1
500
400
400
315
450
350
350
275
400
285
285
240
MHz
MHz
MHz
MHz
Single-port, all supported widths
Simple dual-port, all supported widths
0
1
Simple dual-port with the read-during-
write option set to Old Data, all supported
widths
0
1
M10K
Block
True dual port, all supported widths
ROM, all supported widths
0
0
1
1
400
400
350
350
285
285
MHz
MHz
Internal Temperature Sensing Diode Specifications
Table 1-39: Internal Temperature Sensing Diode Specifications for Arria V Devices
Temperature Range
Accuracy
Offset Calibrated
Option
Sampling Rate
Conversion
Resolution
Minimum Resolution with no
Missing Codes
Time
–40 to 100°C
8°C
No
1 MHz
< 100 ms
8 bits
8 bits
Periphery Performance
This section describes the periphery performance, high-speed I/O, and external memory interface.
Actual achievable frequency depends on design and system specific factors. Ensure proper timing closure in your design and perform HSPICE/
IBIS simulations based on your specific design and system setup to determine the maximum achievable frequency in your system.
Arria V GX, GT, SX, and ST Device Datasheet
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