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317607-001 参数 Datasheet PDF下载

317607-001图片预览
型号: 317607-001
PDF下载: 下载PDF文件 查看货源
内容描述: Express芯片组 [Express Chipset]
分类和应用:
文件页数/大小: 351 页 / 2481 K
品牌: INTEL [ INTEL ]
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Signal Description  
2.3  
DDR2 DRAM Channel B Interface  
Signal Name  
Type  
Description  
SCLK_B[5:0]  
O
SDRAM Differential Clock: (3 per DIMM) SCLK_B and its  
complement, SCLK_B#, make a differential clock pair output.  
The crossing of the positive edge of SCLK_B and the negative  
edge of its complement SCLK_B# are used to sample the  
command and control signals on the SDRAM.  
SSTL-1.8  
SCLK_B[5:0]#  
SCS_B[3:0]#  
O
SDRAM Complementary Differential Clock: (3 per DIMM)  
These are the complementary differential DDR2 Clock signals.  
SSTL-1.8  
O
Chip Select: (1 per Rank) These signals select particular  
SDRAM components during the active state. There is one Chip  
Select for each SDRAM rank  
SSTL-1.8  
SMA_B[14:0]  
SBS_B[2:0]  
O
Memory Address: These signals are used to provide the  
multiplexed row and column address to the SDRAM.  
SSTL-1.8  
O
Bank Select: These signals define which banks are selected  
SSTL-1.8  
within each SDRAM rank  
DDR2: 1-Gb technology uses 8 banks.  
SRAS_B#  
O
Row Address Strobe: Used with SCAS_B# and SWE_B#  
SSTL-1.8  
(along with SCS_B#) to define the SDRAM commands  
SCAS_B#  
O
Column Address Strobe: Used with SRAS_B# and SWE_B#  
SSTL-1.8  
(along with SCS_B#) to define the SDRAM commands.  
SWE_B#  
O
Write Enable: Used with SCAS_B# and SRAS_B# (along  
SSTL-1.8  
with SCS_B#) to define the SDRAM commands.  
SDQ_B[63:0]  
SDM_B[7:0]  
I/O  
SSTL-1.8  
Data Lines: SDQ_B signals interface to the SDRAM data bus.  
O
Data Mask: When activated during writes, the corresponding  
data groups in the SDRAM are masked. There is one SBDM for  
every data byte lane.  
SSTL-1.8  
SDQS_B[7:0]  
I/O  
SSTL-1.8  
Data Strobes: For DDR2, SDQS_B, and its complement  
,SDQS_B#, make up a differential strobe pair. The data is  
captured at the crossing point of SDQS_B and its complement  
SDQS_B# during read and write transactions.  
SDQS_B[7:0]#  
SCKE_B[3:0]  
I/O  
SSTL-1.8  
Data Strobe Complements: These are the complementary  
DDR2 strobe signals.  
O
Clock Enable: (1 per Rank) SCKE_B is used to initialize the  
SDRAMs during power-up, to power-down SDRAM ranks, and  
to place all SDRAM ranks into and out of self-refresh during  
Suspend-to-RAM.  
SSTL-1.8  
SODT_B[3:0]  
O
On Die Termination: Active On-die Termination Control  
SSTL-1.8  
signals for DDR2 devices.  
Datasheet  
35  
 
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