TC1767
Electrical Parameters
5.4.3
Flash Memory Parameters
The data retention time of the TC1767’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Table 27
Flash Parameters
Symbol
Parameter
Values
Unit
Note /
Test Condition
Min.
tRET CC 20
Typ. Max.
Program Flash
–
–
–
–
–
years Max. 1000
erase/program
Retention Time,
Physical Sector1)2)
cycles
Program Flash
Retention Time
Logical Sector1)2)
tRETL CC 20
–
years Max. 100
erase/program
cycles
Data Flash
Endurance
per 32 KB Sector
NE CC 30 000 –
cycles Max. data
retention time
5 years
Data Flash Endurance, NE8 CC 120000 –
EEPROM Emulation
cycles Max. data
retention time
(4 × 16 KB)
5 years
Programming Time
per Page3)
tPR CC –
tERP CC –
–
–
–
–
5
ms
s
–
Program Flash Erase
Time per 256-KB Sector
5
f
CPU = 133 MHz
CPU = 133 MHz
Data Flash Erase Time tERD CC –
for 2 x 32-KB Sector
2.5
s
f
Wake-up time
tWU CC –
4000/fCPU µs
–
+180
1) Storage and inactive time included.
2) At average weighted junction temperature Tj = 100oC, or
the retention time at average weighted temperature of Tj = 110oC is minimum 10 years, or
the retention time at average weighted temperature of Tj = 150oC is minimum 0.7 years.
3) In case the Program Verify feature detects weak bits, these bits will be programmed once more. The
reprogramming takes additional 5 ms.
Data Sheet
120
V1.3, 2009-09
INFINEON [ Infineon ]
