OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ106N12LM6
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
120
1.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=35ꢀµA
1.7
2.2
-
-
0.1
10
1.0
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
µA
nA
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
-
8.9
11.6
16.8
10.6
14.2
-
VGS=10ꢀV,ꢀID=28ꢀA
mΩ VGS=4.5ꢀV,ꢀID=14ꢀA
VGS=3.3ꢀV,ꢀID=4.6ꢀA
Drain-source on-state resistance
RDS(on)
Gate resistance
RG
gfs
0.48
28
0.96
56
1.44
-
Ω
-
Transconductance
S
|VDS|≥2|ID|RDS(on)max,ꢀID=28ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
1400 1800 pF
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
340
10
440
17
pF
pF
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
6
-
-
-
-
ns
ns
ns
ns
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,
RG,ext=1.6ꢀΩ
2.5
14
4
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
5.3
3.3
5.3
-
Gate to source charge1)
Gate charge at threshold1)
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Output charge1)
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=60ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
2.5
3.5
Qsw
Qg
5
10.4
2.8
13
-
Vplateau
Qg
19.6
37
26
49
nC
nC
Qoss
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-12-13
INFINEON [ Infineon ]
