ISZ106N12LM6
MOSFET
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
S3O8
8
5
Features
6
7
6
7
5
8
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀHighꢀavalancheꢀenergyꢀrating
1
4
2
3
3
2
4
1
•ꢀ175°Cꢀoperatingꢀtemperature
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020
Drain
Pin 5-8
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
*1
Gate
Pin 4
Source
Pin 1-3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1: Internal body diode
Parameter
Value
120
10.6
62
Unit
VDS
V
RDS(on),max
ID
mΩ
A
Qoss
37
nC
nC
nC
QGꢀ(0V...4.5V)
Qrrꢀ(1000A/µs)
10.4
106
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISZ106N12LM6
PG-TSDSON-8
10612L6
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-12-13
INFINEON [ Infineon ]
