OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISZ106N12LM6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
250
28
4 V
10 V
24
5 V
200
150
100
50
3 V
4.5 V
20
3.3 V
4.5 V
16
12
8
5 V
4 V
10 V
3.3 V
2.8 V
4
3 V
0
0
0
1
2
3
4
5
0
20
40
60
80
100
120
140
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
150
28
24
25 °C
20
100
50
0
175 °C
16
175 °C
12
8
100 °C
25 °C
4
-55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2
4
6
8
10
12
14
16
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=28ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-12-13