650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Max.ꢀtransientꢀthermalꢀimpedance
Typ.ꢀoutputꢀcharacteristics
101
20
20 V
18
10 V
8 V
16
7 V
14
100
6 V
12
5.5 V
0.5
0.2
0.1
5 V
10
4.5 V
8
10-1
0.05
6
4
2
0
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
0
5
10
15
20
tpꢀ[s]
VDSꢀ[V]
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Typ.ꢀoutputꢀcharacteristics
Typ.ꢀdrain-sourceꢀon-stateꢀresistance
20
3.0
20 V
18
10 V
8 V
16
2.5
7 V
5 V 5.5 V
7 V
14
6 V
12
5.5 V
5 V
10
2.0
1.5
1.0
6 V
6.5 V
4.5 V
8
10 V
6
4
2
0
0
5
10
15
20
0.5
2.5
4.5
6.5
8.5
10.5
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2017-11-27
INFINEON [ Infineon ]
