650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
Powerꢀdissipation
Safeꢀoperatingꢀarea
80
102
70
60
50
40
30
20
10
0
1 µs
10 µs
100 µs
1 ms
101
10 ms
100
10-1
10-2
100
0
50
100
150
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;forꢀVgs>7.5V;ꢀparameter:ꢀtp
Safeꢀoperatingꢀarea
Typ.ꢀdrain-sourceꢀon-stateꢀresistance
102
2.0
101
1.5
1.0
1 µs
10 µs
100 µs
10 ms
1 ms
100
typ
10-1
0.5
10-2
100
0.0
101
102
103
-60
-20
20
60
100
140
180
VDSꢀ[V]
Tjꢀ[°C]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀforꢀVgs>7.5V;ꢀparameter:ꢀD=tp/T
RDS(on)=f(Tj);ꢀID=3.2ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2017-11-27