650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀPG-TOꢀ220
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
2
Thermal resistance, junction - case
RthJC
K/W
Thermal resistance, junction - ambient RthJA
62
K/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀD²PAK
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
2
K/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1) RthJA
62
K/W
SMD version, device on PCB, 6cm²
cooling area
35
Soldering temperature, wave- &
Tsold
260
°C
reflow MSL
reflowsoldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2017-11-27
INFINEON [ Infineon ]
