650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
6
Continuous drain current1)
IꢀD
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
TCꢀ=ꢀ25°C
3.8
17
Pulsed drain current2)
IꢀD‚pulse
A
IDꢀ=ꢀ1.2A,ꢀVDDꢀ=ꢀ50V
(see table 11)
Avalanche energy, single pulse
EAS
115
mJ
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
EAR
IꢀAR
0.21
1.2
50
mJ
A
IDꢀ=ꢀ1.2A,ꢀVDDꢀ=ꢀ50V
dv/dt
VGS
V/ns VDSꢀ=ꢀ0ꢀ...ꢀ400V
-20
-30
20
V
static
30
AC (f > 1 Hz)
Power dissipation (non FullPAK, SMD)
PG-TO 220, D²PAK
Ptot
62.5
150
70
W
TCꢀ=ꢀ25°C
Operating and storage temperature
Tj‚Tstg
-40
°C
Mounting torque (non FullPAK)
PG-TO 220
Ncm M3 and M3.5 screws
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt3)
IꢀS
6
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ25°C
IꢀS‚pulse
dv/dt
dif/dt
17
50
900
A
V/ns
A/µs
VDSꢀ=ꢀ0ꢀ...ꢀ400V,ꢀISDꢀ≤ꢀID,
Tjꢀ=ꢀ25°C
(see table 9)
Maximum diode commutation speed
1) Limited by Tj max
.
2) Pulse width tp limited by Tj max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2017-11-27
INFINEON [ Infineon ]
