650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
Typ.ꢀtransferꢀcharacteristics
Typ.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
18
102
150 °C
125 °C
16
14
12
10
8
25 °C
25 °C
101
6
100
4
2
0
10-1
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
VGSꢀ[V]
VSDꢀ[V]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
IF=f(VSD);ꢀparameter:ꢀTj
Typ.ꢀgateꢀcharge
Avalancheꢀenergy
10
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
9
8
7
6
5
4
3
2
1
0
120 V
480 V
0
5
10
15
20
25
25
50
75
100
125
150
Qgateꢀ[nC]
Tjꢀ[°C]
VGS=f(Qgate);ꢀID=19.2ꢀAꢀpulsed;ꢀparameter:ꢀVDD
EAS=f(Tj);ꢀID=6.6ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2017-11-27