650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Max.
Drain-source breakdown voltage1)
Gate threshold voltage
V(BR)DSS
VGS(th)
IꢀDSS
V
VGSꢀ=ꢀ0V,ꢀIDꢀ=ꢀ1mA
4
4.5
1
V
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ0.2mA
Zero gate voltage drain current
µA
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ25°C
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ150°C
VGSꢀ=ꢀ20V,ꢀVDSꢀ=ꢀ0V
100
Gate-source leakage current
IꢀGSS
100
nA
Drain-source on-state resistance
RDS(on)
0.594 0.66
1.544
Ω
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ3.2A,ꢀTjꢀ=ꢀ25°C
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ3.2A,ꢀTjꢀ=ꢀ150°C
fꢀ=ꢀ1MHz,ꢀopenꢀdrain
Gate resistance
RG
6.5
Ω
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
543
32
Max.
Input capacitance
Output capacitance
Ciss
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ100V,ꢀfꢀ=ꢀ1MHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
24
97
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ0ꢀ...ꢀ400V
Effective output capacitance, time
related3)
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0V,
VDSꢀ=ꢀ0ꢀ...ꢀ400V
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
9
ns
ns
ns
ns
VDDꢀ=ꢀ400V,ꢀVGSꢀ=ꢀ13V,ꢀIDꢀ=ꢀ3.2A,
RGꢀ=ꢀ6.8Ω
(see table 10)
8
Turn-off delay time
Fall time
40
10
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
3.5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
nC
nC
nC
V
VDDꢀ=ꢀ480V,ꢀIDꢀ=ꢀ3.2A,
VGSꢀ=ꢀ0ꢀtoꢀ10V
Qgd
11
Qg
20
Gate plateau voltage
Vplateau
6.4
1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate
the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales
office.
2)
C
C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V
o(er)
3)
o(tr)
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2017-11-27
INFINEON [ Infineon ]
