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IMW120R140M1H 参数 Datasheet PDF下载

IMW120R140M1H图片预览
型号: IMW120R140M1H
PDF下载: 下载PDF文件 查看货源
内容描述: [IMW120R140M1H是采用TO247-3封装的1200 V、140 mΩ CoolSiC™  SiC MOSFET,它基于先进的沟槽半导体工艺,该工艺经过优化,兼具性能与可靠性。 与IGBT和MOSFET等传统硅(Si)基开关相比,SiC MOSFET具有诸多优势,例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、 独立于温度的低开关损耗以及无阈值导通特性。因此,CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。]
分类和应用: 开关DC-DC转换器双极性晶体管功率因数校正二极管栅极半导体
文件页数/大小: 17 页 / 1172 K
品牌: INFINEON [ Infineon ]
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IMW120R140M1H  
CoolSiC™ 1200V SiC Trench MOSFET  
Table of contents  
Table of contents  
Features ........................................................................................................................................ 1  
Benefits......................................................................................................................................... 1  
Potential applications..................................................................................................................... 1  
Product validation.......................................................................................................................... 1  
Table of contents............................................................................................................................ 2  
1
2
Maximum ratings ................................................................................................................... 3  
Thermal resistances ............................................................................................................... 4  
3
Electrical Characteristics ........................................................................................................ 5  
Static characteristics...............................................................................................................................5  
Dynamic characteristics..........................................................................................................................6  
Switching characteristics........................................................................................................................7  
3.1  
3.2  
3.3  
4
5
6
Electrical characteristic diagrams ............................................................................................ 8  
Package drawing...................................................................................................................14  
Test conditions .....................................................................................................................15  
Revision history.............................................................................................................................16  
Datasheet  
2 of 17  
2.2  
2020-12-11  
 
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