IKZA50N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
3 Diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
58
Unit
Min.
Max.
Diode peak reverse
recovery current
Irrm
VR = 600 V, RG(on) = 8 Ω
Tvj = 25 °C,
IF = 50 A
A
Tvj = 175 °C,
IF = 50 A
95
Diode peak rate of fall of
reverse recovery current
dirr/dt VR = 600 V, RG(on) = 8 Ω
Tvj = 25 °C,
IF = 50 A
-1830
-2520
0.72
A/µs
mJ
°C
Tvj = 150 °C,
IF = 50 A
Reverse recovery energy
Erec
VR = 600 V, RG(on) = 8 Ω
Tvj = 25 °C,
IF = 50 A
Tvj = 175 °C,
IF = 50 A
1.86
Operating junction
temperature
Tvj
-40
175
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Dynamic test circuit, parasitic inductance L = 30 nH, C = 18 pF
σ
σ
Datasheet
6
Revision 1.20
2023-01-19
INFINEON [ Infineon ]
