IKZA50N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Typical switching energy losses as a function of
Typical gate charge
VGE = f(QG)
IC = 50 A
collector emitter voltage
E = f(VCE
)
IC = 50 A, Tvj = 175 °C, VGE = 0/15 V, RG = 8 Ω
7
16
14
12
10
8
6
5
4
3
2
1
0
6
4
2
0
400
500
600
700
800
0
50
100 150 200 250 300 350 400
Typical capacitance as a function of collector-emitter IGBT transient thermal impedance as a function of
voltage
C = f(VCE
f = 100 kHz, VGE = 0 V
pulse width
Zth(j-c) = f(tp)
D = tp/T
)
1
10000
0.1
1000
100
10
0.01
0.001
0.0001
1
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
0
5
10
15
20
25
30
Datasheet
10
Revision 1.20
2023-01-19
INFINEON [ Infineon ]
