IKZA50N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
2 IGBT
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.7
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 50 A, VGE = 15 V
Tvj = 25 °C
2.15
V
Tvj = 175 °C
2
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.8 mA, VCE = VGE
VCE = 1200 V, VGE = 0 V
4.7
5.5
6.2
40
V
Zero gate-voltage collector
current
Tvj = 25 °C
µA
Tvj = 175 °C
3500
Gate-emitter leakage
current
IGES
VCE = 0 V, VGE = 20 V
IC = 50 A, VCE = 20 V
100
nA
Transconductance
Input capacitance
Output capacitance
gfs
Cies
Coes
Cres
98
6.7
134
38
S
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
nF
pF
pF
Reverse transfer
capacitance
Gate charge
QG
IC = 50 A, VGE = 15 V, VCC = 960 V
372
39
nC
ns
Turn-on delay time
td(on)
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 8 Ω, RG(off) = 8 Ω IC = 50 A
Tvj = 175 °C,
IC = 50 A
36
13
Rise time (inductive load)
Turntoff delay time
tr
td(off)
tf
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 8 Ω, RG(off) = 8 Ω IC = 50 A
ns
ns
Tvj = 175 °C,
IC = 50 A
15
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 8 Ω, RG(off) = 8 Ω IC = 50 A
333
411
50
Tvj = 175 °C,
IC = 50 A
Fall time (inductive load)
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 8 Ω, RG(off) = 8 Ω IC = 50 A
ns
Tvj = 175 °C,
IC = 50 A
143
1.05
1.62
Turn-on energy
Eon
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 8 Ω, RG(off) = 8 Ω IC = 50 A
mJ
Tvj = 175 °C,
IC = 50 A
(table continues...)
Datasheet
4
Revision 1.20
2023-01-19
INFINEON [ Infineon ]
