IKZA50N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
13
Unit
Min.
Max.
Internal emitter
inductance measured 5
mm (0.197 in.) from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque
M
M3 screw, Maximum of mounting processes:
3
0.6
40
Nm
K/W
K/W
K/W
Thermal resistance,
junction-ambient
Rth(j-a)
Rth(j-c)
Rth(j-c)
IGBT thermal resistance,
junction-case
0.29
0.5
0.38
0.65
Diode thermal resistance,
junction-case
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
1200
100
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current,
limited by Tvjmax
IC
limited by bondwire
Tc = 25 °C
Tc = 100 °C
82
Pulsed collector current, tp
limited by Tvjmax
ICpulse
200
A
A
Turntoff safe operating
area
VCC ≤ 800 V, VCE,peak < 1200 V, VGE = 0/15 V,
RGoff ≥ 23 Ω, Tvj ≤ 175 °C
200
Gate-emitter voltage
VGE
VGE
20
25
V
V
Transient gate-emitter
voltage
tp ≤ 0.5 µs, D < 0.001
Power dissipation
Ptot
Tc = 25 °C
398
199
W
Tc = 100 °C
Datasheet
3
Revision 1.20
2023-01-19
INFINEON [ Infineon ]
