IKZA50N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Typical collector-emitter saturation voltage as a
function of junction temperature
Gate-emitter threshold voltage as a function of
junction temperature
VCEsat = f(Tvj)
VGEth = f(Tvj)
VGE = 15 V
IC = 0.8 mA
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Typical switching times as a function of collector
current
t = f(IC)
Typical switching times as a function of gate resistor
t = f(RG)
IC = 50 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
Tvj = 175 °C, VGE = 0/15 V, VCC = 600 V, RG = 8 Ω
10000
1000
100
10
10000
1000
100
1
10
0
10 20 30 40 50 60 70 80 90 100
5
10 15 20 25 30 35 40 45 50
Datasheet
8
Revision 1.20
2023-01-19
INFINEON [ Infineon ]
