IKZA50N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
3 Diode
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.4
Unit
Min.
Max.
Turntoff energy
Eoff
Ets
Tvj
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 8 Ω, RG(off) = 8 Ω IC = 50 A
mJ
Tvj = 175 °C,
IC = 50 A
2.96
2.45
4.58
Total switching energy
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 8 Ω, RG(off) = 8 Ω IC = 50 A
mJ
°C
Tvj = 175 °C,
IC = 50 A
Operating junction
temperature
-40
175
Note:
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note or test condition
Values
81
Unit
Diode forward current,
limited by Tvjmax
IF
Tc = 25 °C
A
Tc = 100 °C
51
Diode pulsed current, tp
limited by Tvjmax
IFpulse
Ptot
200
A
Power dissipation
Tc = 25 °C
232
115
W
Tc = 100 °C
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
2.5
Unit
V
Min.
Max.
Diode forward voltage
VF
IF = 50 A
Tvj = 25 °C
3
Tvj = 175 °C
2.3
Diode reverse recovery
time
trr
VR = 600 V, RG(on) = 8 Ω
Tvj = 25 °C,
IF = 50 A
96
ns
Tvj = 175 °C,
IF = 50 A
168
1.74
4.63
Diode reverse recovery
charge
Qrr
VR = 600 V, RG(on) = 8 Ω
Tvj = 25 °C,
IF = 50 A
µC
Tvj = 175 °C,
IF = 50 A
(table continues...)
Datasheet
5
Revision 1.20
2023-01-19
INFINEON [ Infineon ]
