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ICE3BR0665JF 参数 Datasheet PDF下载

ICE3BR0665JF图片预览
型号: ICE3BR0665JF
PDF下载: 下载PDF文件 查看货源
内容描述: 离线式开关电源电流模式控制器,集成650V [Off-Line SMPS Current Mode Controller with integrated 650V]
分类和应用: 开关控制器
文件页数/大小: 36 页 / 1631 K
品牌: INFINEON [ Infineon ]
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CoolSET®-F3R  
ICE3BR0665JF  
Functional Description  
3.5.3  
Gate Driver  
3.6  
Current Limiting  
PWM Latch  
FF1  
VCC  
Current Limiting  
PWM-Latch  
1
Propagation-Delay  
Compensation  
Gate  
CoolMOS®  
Vcsth  
Leading  
Edge  
C10  
Blanking  
220ns  
PWM-OP  
Gate Driver  
&
C12  
G10  
Figure 15  
Gate Driver  
0.26V  
The driver-stage is optimized to minimize EMI and to  
provide high circuit efficiency. This is done by reducing  
the switch on slope when exceeding the internal  
CoolMOS® threshold. This is achieved by a slope  
control of the rising edge at the driver’s output (see  
Figure 9).  
1pF  
10k  
Active Burst  
Mode  
D1  
CS  
(internal)  
VGate  
Figure 17  
Current Limiting Block  
There is a cycle by cycle peak current limiting operation  
realized by the Current-Limit comparator C10. The  
source current of the integrated CoolMOS® is sensed  
via an external sense resistor RSense. By means of  
RSense the source current is transformed to a sense  
voltage VSense which is fed into the pin CS. If the voltage  
VSense exceeds the internal threshold voltage Vcsth, the  
comparator C10 immediately turns off the gate drive by  
resetting the PWM Latch FF1.  
ca. t = 130ns  
5V  
A Propagation Delay Compensation is added to  
support the immediate shut down of the integrated  
CoolMOS® with very short propagation delay. Thus the  
influence of the AC input voltage on the maximum  
output power can be reduced to minimal.  
In order to prevent the current limit from distortions  
caused by leading edge spikes, a Leading Edge  
Blanking is integrated in the current sense path for the  
comparators C10, C12 and the PWM-OP.  
The output of comparator C12 is activated by the Gate  
G10 if Active Burst Mode is entered. When it is  
activated, the current limiting is reduced to 0.26V. This  
voltage level determines the maximum power level in  
Active Burst Mode.  
t
Figure 16  
Gate Rising Slope  
Thus the leading switch on spike is minimized.  
Furthermore the driver circuit is designed to eliminate  
cross conduction of the output stage.  
During power up, when VCC is below the undervoltage  
lockout threshold VVCCoff, the output of the Gate Driver  
is set to low in order to disable power transfer to the  
secondary side.  
Version 2.0  
13  
11 Sep 2008  
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