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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Protection functions  
6.6  
Electrical characteristics for the protection functions  
Table 7  
Electrical Characteristics: Protection  
VS = 8 V to 36 V, TJ = -40°C to 150°C, (unless otherwise specified).  
Typical values are given at VS = 28 V, TJ = 25°C  
Parameter  
Symbol  
Values  
Unit Note or Test  
Condition  
Number  
Min.  
Typ. Max.  
Loss of ground  
Output leakage current while  
GND disconnected  
IOUT(GND)  
VDS(REV)  
VS(AZ)  
0.1  
650  
70  
mA  
mV  
V
12)13)VS = 28 V  
See Figure 15  
P_6.6.1  
P_6.6.2  
P_6.6.3  
Reverse polarity  
Drain source diode voltage  
during reverse polarity  
200  
65  
700  
75  
14)IL = - 1 A  
See Figure 18  
Overvoltage  
Overvoltage protection  
ISOV = 5 mA  
See Figure 17  
Overload condition  
15)  
Load current limitation  
IL5(SC)  
9
11  
80  
14  
A
K
V
= 5 V See  
P_6.6.4  
P_6.6.8  
DS  
Figure 19 and  
Chapter 9.3  
16)See Figure 19  
Dynamic temperature increase ΔTJ(SW)  
while switching  
Thermal shutdown temperature TJ(SC)  
150  
170  
30  
200  
°C  
K
14)See Figure 19  
13)  
P_6.6.10  
P_6.6.11  
Thermal shutdown hysteresis  
ΔTJ(SC)  
12  
All pins are disconnected except VS and OUT.  
Not Subject to production test, specified by design.  
Test at TJ = +150°C only.  
Test at TJ = -40°C only.  
Functional test only  
13  
14  
15  
16  
Datasheet  
25  
Rev. 1.00  
2019-03-09  
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