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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Protection functions  
Microcontroller  
protection diodes  
ZIS(AZ)  
VS  
ZD(AZ)  
ZDS(AZ)  
IS  
RSENSE  
VDS(REV)  
DSEL0  
DSEL1  
RDSEL0  
RDSEL1  
RDEN  
RIN  
DEN  
INx  
LOGIC  
-VS(REV)  
OUTx  
ZDESD  
GND  
IS  
RGND  
L,RL  
RIS  
D
Reverse Polarity.vsd  
Figure 18  
Reverse polarity protection with external components  
6.5  
Overload protection  
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6200-4ESA  
offers several protection mechanisms.  
6.5.1  
Current limitation  
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the  
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature increases, which affects  
the current flowing in the DMOS.  
6.5.2  
Temperature limitation in the power DMOS  
Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of  
either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF  
latches the output until the temperature has reached an acceptable value which is depicted in Figure 19.  
No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is  
switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).  
Datasheet  
23  
Rev. 1.00  
2019-03-09  
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