IBM11N1645L
IBM11N1735Q
1M x 64/72 DRAM Module
DC Electrical Characteristics
Symbol
(T
A
= 0 to +70˚C, V
CC
= 3.3V
±
0.3V)
x64
Min.
-60/6R
-70
—
—
—
-60/6R
-70
-60/6R
-70
—
—
—
—
—
-60/6R
-70
RAS, WE,
OE
CAS
Address
—
—
-20
-10
-40
-10
Max.
660
560
8
660
560
360
320
4
660
560
+20
+10
+40
+10
x72
Min.
—
—
—
—
—
—
—
—
—
—
-30
-20
-60
-10
Max.
850
mA
720
10
850
mA
720
490
mA
450
6
850
mA
720
+30
+20
+60
+10
µA
µA
1, 3
mA
1, 2, 3
1, 3
mA
1, 2, 3
Units
Notes
Parameter
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min.)
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS = V
IH
)
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS = V
IH
: t
RC
= t
RC
min)
EDO Page Mode Current
Average Power Supply Current, EDO Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
HPC
= t
HPC
min)
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = V
CC
- 0.2V)
CAS Before RAS Refresh Current
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: t
RC
= t
RC
min)
Input Leakage Current
Input Leakage Current, any input
(0.0
≤
V
IN
≤
(V
CC
+ 0.3V)), All Other Pins Not Under Test =
0V
Output Leakage Current
(D
OUT
is disabled, 0.0
≤
V
OUT
≤
V
CC
)
Output Level (TTL)
Output “H” Level Voltage
( I
OUT
= -2.5mA)
Output Level (TTL)
Output “L” Level Voltage
( I
OUT
= +2.1mA)
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
2.4
V
CC
2.4
V
CC
V
V
OL
0.0
0.4
0.0
0.4
V
1. I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on cycle rate.
2. I
CC1
and I
CC4
depend on output loading. Specified values are obtained with the output open.
3. Address can be changed once or less while RAS =V
IL
. In the case of I
CC4
, it can be changed once or less when CAS =V
IH
.
50H8035
SA14-4630-02
Revised 5/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 33
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