IBM11N1645L
IBM11N1735Q
1M x 64/72 DRAM Module
Absolute Maximum Ratings
Symbol
VCC
Parameter
Rating (3.3V)
-0.5 to +4.6
Units
V
Notes
Power Supply Voltage
Input Voltage
1
1
1
1
1
VIN
-0.5 to min (VCC + 0.5, 4.6)
-0.3 to +6.5
V
VIN/OUT (SPD)
VOUT
Input Voltage (Serial PD Device)
Output Voltage
V
-0.5 to min (VCC + 0.5, 4.6)
V
TOPR
TSTG
°C
Operating Temperature
0 to +70
°C
Storage Temperature
Power Dissipation
-55 to +125
1
x64
x72
2.4
3.1
50
W
W
1
1
1
PD
IOUT
Short Circuit Output Current
mA
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions above those indicated is not implied. Exposure to absolute maximum rating con-
dition for extended periods may affect reliability.
°
Recommended DC Operating Conditions (TA = 0 to 70 C)
3.3V
Symbol
Parameter
Supply Voltage
Units
Notes
Min
3.0
Typ
3.3
—
Max
3.6
VCC
VIH
VIL
V
V
V
1
VCC + 0.5
0.8
Input High Voltage
Input Low Voltage
2.0
1, 2
1, 2
-0.5
—
1. All voltages referenced to VSS.
2. VIH may overshoot to VCC + 1.2V for pulse widths of ≤ 4.0ns (or VCC + 1.0V for ≤ 8.0ns). Additionally, VIL may undershoot to -2.0V
for pulse widths ≤ 4.0ns (or -1.0V for ≤ 8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-
ence.
°
Capacitance (TA = 0 to +70 C, VCC = 3.3V ± 0.3V)
Max
x64
Max
x72
Symbol
Parameter
Input Capacitance (A0-A9)
Units
CI1
CI2
45
40
15
8
55
45
20
8
pF
pF
pF
pF
pF
pF
Input Capacitance (RAS, WE, OE)
Input Capacitance (CAS)
CI3
CI4
Input Capacitance (SCL, SA0-3)
Input/Output Capacitance (DQX, CBX)
Input/Output Capacitance (SDA)
CIO1
CIO2
11
10
11
10
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H8035
SA14-4630-02
Revised 5/96
Page 6 of 33
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