IBM11N1645L
IBM11N1735Q
1M x 64/72 DRAM Module
Read-Modify-Write Cycle
-60
-6R
-70
Symbol
Parameter
Unit
Notes
Min
135
79
Max
—
Min
135
79
Max
—
Min
162
94
Max
—
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
ns
ns
ns
ns
ns
—
—
—
1
1
1
CAS to WE Delay Time
34
—
36
—
44
—
Column Address to WE Delay Time
OE Command Hold Time
49
—
49
—
59
—
10
—
10
—
12
—
1. tWCS, tRWD, tCWD, and tAWD are not restrictive parameters. They are included in the data sheet as electrical characteristics only. If
WCS ≥ tWCS(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
t
entire cycle; If tRWD ≥ tRWD(min.), tCWD ≥ tCWD(min.) and tAWD ≥ tAWD(min.), the cycle is a Read-Modify-Write cycle and the data will
contain read from the selected cell: If neither of the above sets of conditions are met, the condition of the data (at access time) is
indeterminate.
EDO Mode Cycle
-60
-6R
-70
Max.
Symbol
Parameter
Units
Notes
Min.
10
Max.
10K
—
Min.
10
Max.
10K
—
Min.
12
tHCAS
tHPC
CAS Pulse Width (EDO Page Mode)
10K
—
ns
ns
EDO Page Mode Cycle Time (Read/Write)
25
25
30
EDO Page Mode Read Modify Write Cycle
Time
tHPRWC
60
—
60
—
72
—
ns
tDOH
tWHZ
Data-out Hold Time from CAS
5
0
—
5
0
—
5
0
—
ns
ns
Output buffer Turn-Off Delay from WE
10
10
15
WE Pulse Width to Output Disable at CAS
High
tWPZ
10
—
10
—
10
—
ns
tCPRH
tCPA
tRASP
tOEP
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
EDO Page Mode RAS Pulse Width
OE High Pulse Width
35
—
60
10
10
—
35
35
35
60
10
10
—
35
40
—
70
10
10
—
40
ns
ns
ns
ns
ns
1
125K
—
125K
—
125K
—
tOEHC
OE High Hold Time from CAS High
—
—
—
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H8035
SA14-4630-02
Revised 5/96
Page 11 of 33
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