Discontinued (8/99 - last order; 12/99 - last ship)
IBM0364804 IBM0364164
IBM0364404 IBM03644B4
64Mb Synchronous DRAM - Die Revision B
DC Electrical Characteristics (TA = 0 to +70°C, VDD = 3.3V ±0.3V)
Symbol
Parameter
Min.
-2
Max.
+2
Units
Notes
1
Input Leakage Current, any input
(0.0V ≤ VIN ≤ VDD), All Other Pins Not Under Test = 0V
II(L)
µA
Output Leakage Current
IO(L)
VOH
VOL
µA
V
-2
2.4
—
+2
—
1
(DOUT is disabled, 0.0V ≤ VOUT ≤ VDDQ
)
Output Level (LVTTL)
Output “H” Level Voltage (IOUT = -2.0mA)
Output Level (LVTTL)
Output “L” Level Voltage (IOUT = +2.0mA)
0.4
V
1. Multiply given planar values by 2 for 2-high stacked device.
DC Output Load Circuit
3.3V
1200Ω
V
(DC) = 2.4V, I = -2mA
OH
OH
Output
V
(DC) = 0.4V, I = 2mA
OL
OL
50pF
870Ω
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
19L3264.E35855A
1/28/99
Page 40 of 72
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