Discontinued (8/99 - last order; 12/99 - last ship)
IBM0364804 IBM0364164
IBM0364404 IBM03644B4
64Mb Synchronous DRAM - Die Revision B
Absolute Maximum Ratings
Symbol
VDD
Parameter
Power Supply Voltage
Rating
-0.3 to +4.6
-0.3 to +4.6
-0.3 to VDD+0.3
-0.3 to VDD+0.3
0 to +70
Units
V
Notes
1
1
1
1
1
1
1
1
VDDQ
VIN
Power Supply Voltage for Output
Input Voltage
V
V
VOUT
TA
Output Voltage
V
°C
°C
W
Operating Temperature (ambient)
Storage Temperature
Power Dissipation
TSTG
PD
-55 to +125
1.0
IOUT
Short Circuit Output Current
50
mA
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions (TA = 0 to 70°C)
Rating
Symbol
Parameter
Supply Voltage
Units
Notes
Min.
3.0
Typ.
3.3
3.3
—
Max.
3.6
VDD
VDDQ
VIH
V
V
V
V
1
Supply Voltage for Output
Input High Voltage
3.0
3.6
1
VDD + 0.3
0.8
2.0
1, 2
1, 3
VIL
Input Low Voltage
-0.3
—
1. All voltages referenced to VSS and VSSQ
.
2. VIH (max) = VDD/VDDQ + 1.2V for pulse width ≤ 5ns.
3. VIL (min) = VSS/VSSQ - 1.2V for pulse width ≤ 5ns.
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ±0.3V)
Symbol
Parameter
Min.
2.5
Typ.
Max.
4.0
Units
pF
Notes
Input Capacitance
2.9
1
(A0-A11, BS0, BS1, CS, RAS, CAS, WE, CKE, DQM)
CI
Input Capacitance (CLK)
2.5
4.0
3.2
5.4
4.0
6.5
pF
pF
1
1
CO
Output Capacitance (DQ0 - DQ15)
1. Multiply given planar values by 2 for 2-high stacked device except CS.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
19L3264.E35855A
1/28/99
Page 39 of 72
IBM [ IBM ]
