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IBM0316809CT3D-10 参数 Datasheet PDF下载

IBM0316809CT3D-10图片预览
型号: IBM0316809CT3D-10
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 120 页 / 1896 K
品牌: IBM [ IBM ]
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Discontinued (12/98 - last order; 9/99 last ship)  
IBM0316409C IBM0316809C IBM0316169C  
IBM03164B9C  
16Mb Synchronous DRAM-Die Revision D  
Read Interrupted by a Write  
To interrupt a burst read with a Write Command, DQM must be used to avoid data contention on the data bus  
by placing the chip output drivers in a high impedance state at least one clock cycle before the Write Com-  
mand is initiated. To insure the chip output drivers are tri-stated one cycle before the write operation begins,  
DQM must be activated at least 3 clock cycles before the Write Command and be deactivated in the same  
clock cycle as the Write Command.  
Read Interrupted by a Write (Burst Length = 4, CAS Latency = 1, 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
: “H” or “L”  
DQM  
READ A  
NOP  
NOP  
WRITE A  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
Must be Hi-Z before  
the Write Command  
CAS latency = 1  
DOUT A  
DOUT A  
DOUT A  
DIN A  
0
DIN A  
DIN A  
DIN A  
3
0
1
2
1
2
tCK1, DQs  
CAS latency = 2  
DOUT A  
DOUT A  
DIN A  
DIN A  
DIN A  
DIN A  
3
0
1
0
1
2
t
CK2, DQs  
CAS latency = 3  
DOUT A  
DIN A  
DIN A  
DIN A  
DIN A  
3
0
0
1
2
tCK3, DQs  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
08J3348.E35853  
5/98  
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