11
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
o
CAPACITANCE (TA= 25 C, f=1MHz)
6/H
Parameter
Pin
Symbol
Unit
Min
Max
CLK
CI1
CI2
1.5
3.5
pF
pF
pF
A0~A13, BA0, BA1, CKE, CS, RAS,
Input capacitance
1.5
2.0
3.0
4.5
CAS, WE, DQM0~3
DQ0 ~ DQ31
Data input/output capacitance
CI/O
o
DC CHARACTERRISTICS I (TA= -30 to 85 C)
Parameter
Symbol
Min
Max
Unit
Note
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
-1
1
uA
uA
V
1
2
3
4
-1.5
0.9*VDDQ
-
1.5
VOH
VOL
-
0.1*VDDQ
V
Note :
1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V.
2. DOUT is disabled. VOUT= 0 to 1.95V.
3. IOUT = - 0.1mA
4. IOUT = + 0.1mA
Rev 1.2 / Jun. 2008
9
HYNIX [ HYNIX SEMICONDUCTOR ]
