11
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
Rating
Unit
oC
Ambient Temperature
TA
-30 ~ 85
oC
V
Storage Temperature
TSTG
VIN, VOUT
VDD
-55 ~ 150
-0.3 ~ VDDQ+0.3
-0.3 ~ 2.7
-0.3 ~ 2.7
50
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Short Circuit Output Current
Power Dissipation
V
VDDQ
IOS
V
mA
W
PD
1
o
DC OPERATING CONDITION (TA= -30 to 85 C )
Parameter
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD
Min
1.7
Typ
1.8
1.8
-
Max
1.95
Unit
Note
1
V
V
V
V
VDDQ
VIH
1.7
1.95
1, 2
1, 2
1, 2
0.8*VDDQ
-0.3
VDDQ+0.3
0.2*VDDQ
VIL
-
Note :
1. All Voltages are referenced to VSS = 0V
2. VDDQ must not exceed the level of VDD
o
AC OPERATING TEST CONDITION (TA= -30 to 85 C, VDD = 1.8V, VSS = 0V)
Parameter
Symbol
Value
Unit
Note
AC Input High/Low Level Voltage
VIH / VIL
0.9*VDDQ /
0.2*VDDQ
V
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Vtrip
tR / tF
Voutref
CL
0.5*VDDQ
1
V
ns
V
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
0.5*VDDQ
pF
Rev 1.2 / Jun. 2008
8
HYNIX [ HYNIX SEMICONDUCTOR ]
