11
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
o
DC CHARACTERISTICS II (TA= -30 to 85 C)
Speed
Unit Note
166MHz 133MHz 105MHz
Parameter
Symbol
Test Condition
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
Operating Current
IDD1
90
80
mA
1
Precharge Standby
Current
in Power Down Mode
IDD2P
CKE ≤ VIL(max), tCK = min
CKE ≤ VIL(max), tCK = ∞
0.4
0.4
mA
mA
IDD2PS
CKE ≥ VIH(min), CS ≥ VIH(min), tCK
= min
Input signals are changed one time
during
2clks.
Precharge Standby
Current
in Non Power Down
Mode
IDD2N
5
mA
mA
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
IDD2NS
2
IDD3P
CKE ≤ VIL(max), tCK = min
CKE ≤ VIL(max), tCK = ∞
3
2
Active Standby Current
in Power Down Mode
IDD3PS
CKE ≥ VIH(min), CS ≥ VIH(min), tCK
= 15ns
Input signals are changed one time
during
2clks.
IDD3N
10
5
Active Standby Current
in Non Power Down
Mode
mA
mA
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
IDD3NS
IDD4
Burst Mode Operating
Current
tCK ≥ tCK(min), IOL=0mA
All banks active
70
60
1
Auto Refresh Current IDD5
tRFC ≥ tRFC(min)
CKE ≤ 0.2V
120
mA
mA
Self Refresh Current
IDD6
See Next Page
2
3
Standby Current in
Deep Power Down
Mode
See the Page for
“Deep Power Down Mode”
IDD7
10
uA
Notes :
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2. See the tables of next page for more specific IDD6 current values.
3. Please contact Hynix office for more information and ability for DPD operation.
Deep Power Down operation is a hynix optional function.
Rev 1.2 / Jun. 2008
10
HYNIX [ HYNIX SEMICONDUCTOR ]
