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1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
DC CHARACTERISTICS III - Low Power (IDD6)
Memory Array
Temp.
( oC)
Unit
4 Banks
450
2 Banks
350
1 Bank
45
85
300
500
uA
uA
900
650
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45oC are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically
adjust the interval of self-refresh operation according to ambient temperature variations.
Rev 1.2 / Jun. 2008
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