11
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)
166MHz
133MHz
105MHz
Parameter
Symbol
Unit Note
Min Max Min Max Min Max
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
tRC
60
18
-
-
72.5
22.5
-
-
90
-
-
ns
ns
tRCD
tRAS
tRP
28.5
42 100K 45 100K 60 100K ns
RAS Precharge Time
18
12
110
1
-
-
-
-
-
-
22.5
15
110
1
-
-
-
-
-
-
28.5
19
110
1
-
-
-
-
-
-
ns
ns
RAS to RAS Bank Active Delay
AUTO REFRESH Period
tRRD
tRFC
tCCD
tWTL
tDPL
ns
CAS to CAS Delay
CLK
CLK
CLK
Write Command to Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
0
0
0
2
2
2
tDAL
tDQZ
tDQM
tMRD
tPROZ3
tPROZ2
tDPL+tRP
2
0
2
3
2
-
-
-
-
-
2
0
2
3
2
-
-
-
-
-
2
0
2
3
2
-
-
-
-
-
CLK
CLK
CLK
CLK
CLK
DQM to Data-In Mask
MRS to New Command
CAS Latency=3
Precharge to Data Output
High-Z
CAS Latency=2
1CLK
+
1CLK
+
1CLK
+
Power Down Exit Time
tDPE
-
-
-
CLK
tCKS
tCKS
tCKS
Self Refresh Exit Time
Refresh Time
tXSR
tREF
120
-
-
120
-
-
120
-
-
ns
64
64
64
ms
Rev 1.2 / Jun. 2008
13
HYNIX [ HYNIX SEMICONDUCTOR ]
